Invention Grant
- Patent Title: 3D integrated circuit and method of manufacturing the same
- Patent Title (中): 3D集成电路及其制造方法
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Application No.: US13003744Application Date: 2010-09-19
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Publication No.: US08541305B2Publication Date: 2013-09-24
- Inventor: Huilong Zhu
- Applicant: Huilong Zhu
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201010189140 20100524
- International Application: PCT/CN2010/001435 WO 20100919
- International Announcement: WO2011/147061 WO 20111201
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44 ; H01L21/322
Abstract:
The present invention provides a 3D integrated circuit and a manufacturing method thereof. The circuit structure comprises: a semiconductor substrate; at least one semiconductor device formed on the upper surface of the semiconductor substrate; a through-Si-via through the semiconductor substrate and comprising an insulating layer covering sidewalls of the through-Si-via and conductive material filled in the insulating layer; an interconnection structure connecting the at least one semiconductor device and the through-Si-via; and a diffusion trapping region formed on the lower surface of the semiconductor substrate. The present invention is applicable in manufacture of the 3D integrated circuit.
Public/Granted literature
- US20110284992A1 3D INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-11-24
Information query
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