Invention Grant
- Patent Title: Deposition method for passivation of silicon wafers
- Patent Title (中): 硅晶片钝化沉积方法
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Application No.: US12979761Application Date: 2010-12-28
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Publication No.: US08541317B2Publication Date: 2013-09-24
- Inventor: Kranthi Akurati , Magnus Kunow , Andreas Zimmermann , Ron Jervis
- Applicant: Kranthi Akurati , Magnus Kunow , Andreas Zimmermann , Ron Jervis
- Applicant Address: CH Zurich
- Assignee: ABB Technology AG
- Current Assignee: ABB Technology AG
- Current Assignee Address: CH Zurich
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: EP08159693 20080704
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L29/06 ; H01L23/544
Abstract:
A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer.
Public/Granted literature
- US20110189861A1 Deposition Method for Passivation of Silicon Wafers Public/Granted day:2011-08-04
Information query
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