Invention Grant
- Patent Title: Accelerator on a chip having a cold ion source
- Patent Title (中): 具有冷离子源的芯片上的加速器
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Application No.: US13585829Application Date: 2012-08-14
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Publication No.: US08541757B1Publication Date: 2013-09-24
- Inventor: Kim L. Hailey , Robert O. Conn
- Applicant: Kim L. Hailey , Robert O. Conn
- Applicant Address: US CA Los Gatos
- Assignee: Transmute, Inc.
- Current Assignee: Transmute, Inc.
- Current Assignee Address: US CA Los Gatos
- Agency: Imperium Patent Works
- Agent T. Lester Wallace
- Main IPC: H01H1/54
- IPC: H01H1/54

Abstract:
An assembly includes a cold ion source and a chip. The cold ion source is fixed to the chip so that ions from the ion source can enter an acceleration channel in the chip. In one specific example, the ion source includes an ion exchange membrane that produces cold ions in that the ions as produced have an energy of less than 30 eV. The chip includes a substrate (such as a semiconductor substrate or a glass substrate) and a dielectric layer disposed on substrate, where the acceleration channel is a channel formed into the dielectric layer. In one specific example, the assembly is part of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.
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