Invention Grant
- Patent Title: Vertical tunneling negative differential resistance devices
-
Application No.: US13098617Application Date: 2011-05-02
-
Publication No.: US08541773B2Publication Date: 2013-09-24
- Inventor: Ravi Pillarisetty
- Applicant: Ravi Pillarisetty
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
The present disclosure relates to the fabrication of microelectronic devices having at least one negative differential resistance device formed therein. In at least one embodiment, the negative differential resistance devices may be formed utilizing quantum wells. Embodiments of negative differential resistance devices of present description may achieve high peak drive current to enable high performance and a high peak-to-valley current ratio to enable low power dissipation and noise margins, which allows for their use in logic and/or memory integrated circuitry.
Public/Granted literature
- US20120280210A1 VERTICAL TUNNELING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES Public/Granted day:2012-11-08
Information query
IPC分类:
