Invention Grant
- Patent Title: Light emitting diode device and method for fabricating the same
- Patent Title (中): 发光二极管装置及其制造方法
-
Application No.: US13251460Application Date: 2011-10-03
-
Publication No.: US08541793B2Publication Date: 2013-09-24
- Inventor: Yu-Nung Shen , Tsung-Chi Wang
- Applicant: Yu-Nung Shen , Tsung-Chi Wang
- Agency: Nixon & Vanderhye P.C.
- Priority: TW99133956A 20110131
- Main IPC: H01L33/60
- IPC: H01L33/60

Abstract:
A light emitting diode device includes: at least one light emitting diode chip, which includes a semiconductor unit, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes, a reflective metal layer disposed on a portion of the light-transmissive insulating layer, a protective insulating layer that is disposed on the reflective metal layer, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes; and a light-transmissive envelope layer that covers a surface of the light emitting diode chip opposite to the electrode-mounting surface, that extends to cover outer lateral surfaces of the light emitting diode chip, and that is doped with a fluorescence powder.
Public/Granted literature
- US20120018748A1 LIGHT EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-01-26
Information query
IPC分类: