Invention Grant
- Patent Title: Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
- Patent Title (中): 氮化物半导体发光器件及其制造方法
-
Application No.: US11638581Application Date: 2006-12-14
-
Publication No.: US08541796B2Publication Date: 2013-09-24
- Inventor: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-363589 20051216
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.
Public/Granted literature
- US20070138491A1 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device Public/Granted day:2007-06-21
Information query
IPC分类:
