Invention Grant
- Patent Title: Cadmium-free re-emitting semiconductor construction
- Patent Title (中): 无镉再发射半导体结构
-
Application No.: US13379858Application Date: 2010-06-25
-
Publication No.: US08541803B2Publication Date: 2013-09-24
- Inventor: Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
- Applicant: Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
- Applicant Address: US MN Saint Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN Saint Paul
- Agent Daniel J. Iden
- International Application: PCT/US2010/040038 WO 20100625
- International Announcement: WO2011/008476 WO 20110120
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/00

Abstract:
Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.
Public/Granted literature
- US20120097921A1 Cadmium-free Re-Emitting Semiconductor Construction Public/Granted day:2012-04-26
Information query
IPC分类: