Invention Grant
- Patent Title: Semiconductor component and method for producing it
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US12175848Application Date: 2008-07-18
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Publication No.: US08541839B2Publication Date: 2013-09-24
- Inventor: Franz Hirler
- Applicant: Franz Hirler
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102007033839 20070718
- Main IPC: H01L29/0634
- IPC: H01L29/0634 ; H01L29/7802

Abstract:
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. A first electrode on the top side of the semiconductor body is electrically connected to a first zone near the surface of the semiconductor body. A second electrode is electrically connected to a second zone of the semiconductor body. Furthermore, the semiconductor body has a drift path region, which is arranged in the semiconductor body between the first electrode and the second electrode. A cell region of the semiconductor component is subdivided into a main cell region and an auxiliary cell region, wherein the breakdown voltage of the auxiliary cells is greater than the breakdown voltage of the main cells.
Public/Granted literature
- US20090032865A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT Public/Granted day:2009-02-05
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