Invention Grant
- Patent Title: High-k transistors with low threshold voltage
- Patent Title (中): 具有低阈值电压的高k晶体管
-
Application No.: US13442087Application Date: 2012-04-09
-
Publication No.: US08541842B2Publication Date: 2013-09-24
- Inventor: Martin M. Frank
- Applicant: Martin M. Frank
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02
Abstract:
A semiconductor structure includes a high-k dielectric layer over a semiconductor substrate; and a gate layer over the high-k dielectric layer, wherein the gate layer has a negative electrical bias during anneal.
Public/Granted literature
- US20120193716A1 HIGH-K TRANSISTORS WITH LOW THRESHOLD VOLTAGE Public/Granted day:2012-08-02
Information query
IPC分类:
