To limit or prevent current crowding, various HV-MOSFET embodiments include a current diversion region disposed near a drain region of an HV-MOSFET and near an upper surface of the semiconductor substrate. In some embodiments, the current diversion region is disposed near a field plate of the HV-MOSFET, wherein the field plate can also help to reduce or “smooth” electric fields near the drain to help limit current crowding. In some embodiments, the current diversion region is a p-doped, n-doped, or intrinsic region that is at a floating voltage potential. This current diversion region can push current deeper into the substrate of the HV-MOSFET (relative to conventional HV-MOSFETs), thereby reducing current crowding during ESD events. By reducing current crowding, the current diversion region makes the HV-MOSFETs disclosed herein more impervious to ESD events and, therefore, more reliable in real-world applications.