Invention Grant
- Patent Title: Method and system for forming resonators over CMOS
- Patent Title (中): 用于在CMOS上形成谐振器的方法和系统
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Application No.: US12333878Application Date: 2008-12-12
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Publication No.: US08541850B2Publication Date: 2013-09-24
- Inventor: Arun K. Gupta , Lance W. Barron , William C. McDonald
- Applicant: Arun K. Gupta , Lance W. Barron , William C. McDonald
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.
Public/Granted literature
- US20100148880A1 Method and System for Forming Resonators Over CMOS Public/Granted day:2010-06-17
Information query
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