Invention Grant
- Patent Title: Semiconductor light receiving element and method for manufacturing the same
- Patent Title (中): 半导体光接收元件及其制造方法
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Application No.: US13307791Application Date: 2011-11-30
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Publication No.: US08541859B2Publication Date: 2013-09-24
- Inventor: Yuji Koyama
- Applicant: Yuji Koyama
- Applicant Address: JP Yokohama-shi, Kanagawa
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-267839 20101130
- Main IPC: H01L31/0203
- IPC: H01L31/0203

Abstract:
A semiconductor light receiving element includes a first semiconductor layer having a first conduction type, a second semiconductor layer that is provided on the first semiconductor layer and has a light receiving area, the second semiconductor layer having a second conduction type opposite to the first conduction type, an insulation film provided on the second semiconductor layer, and an electrode provided on the insulation film, the insulation film having a plurality of windows in an area in which the electrode overlaps the plurality of windows, the electrode being electrically connected to the second semiconductor layer via the plurality of windows.
Public/Granted literature
- US20120133013A1 SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-05-31
Information query
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