Invention Grant
US08541869B2 Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
有权
在半极主体氮化镓衬底上生长的切割面（Ga，Al，In）N边缘发射激光二极管
- Patent Title: Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
- Patent Title (中): 在半极主体氮化镓衬底上生长的切割面（Ga，Al，In）N边缘发射激光二极管
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Application No.: US12030099Application Date: 2008-02-12
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Publication No.: US08541869B2Publication Date: 2013-09-24
- Inventor: Shuji Nakamura , James S. Speck , Steven P. DenBaars , Anurag Tyagi
- Applicant: Shuji Nakamura , James S. Speck , Steven P. DenBaars , Anurag Tyagi
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/16
- IPC: H01L33/16
Abstract:
A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.
Public/Granted literature
- US20080191223A1 CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR BULK GALLIUM NITRIDE SUBSTRATES Public/Granted day:2008-08-14
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