Invention Grant
US08541882B2 Stacked IC device with recessed conductive layers adjacent to interlevel conductors
有权
具有与层间导体相邻的凹陷导电层的堆叠IC器件
- Patent Title: Stacked IC device with recessed conductive layers adjacent to interlevel conductors
- Patent Title (中): 具有与层间导体相邻的凹陷导电层的堆叠IC器件
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Application No.: US13240058Application Date: 2011-09-22
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Publication No.: US08541882B2Publication Date: 2013-09-24
- Inventor: Shih-Hung Chen , Yan-Ru Chen , Lo-Yueh Lin
- Applicant: Shih-Hung Chen , Yan-Ru Chen , Lo-Yueh Lin
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co. Ltd.
- Current Assignee: Macronix International Co. Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent James F. Hann
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/283

Abstract:
An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers.
Public/Granted literature
- US20130075920A1 Multilayer Connection Structure and Making Method Public/Granted day:2013-03-28
Information query
IPC分类: