Invention Grant
US08541882B2 Stacked IC device with recessed conductive layers adjacent to interlevel conductors 有权
具有与层间导体相邻的凹陷导电层的堆叠IC器件

Stacked IC device with recessed conductive layers adjacent to interlevel conductors
Abstract:
An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers.
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