Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13472979Application Date: 2012-05-16
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Publication No.: US08542034B2Publication Date: 2013-09-24
- Inventor: Kiyoshi Kato
- Applicant: Kiyoshi Kato
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-113734 20110520
- Main IPC: H03K19/173
- IPC: H03K19/173 ; H01L25/00

Abstract:
As semiconductor devices including semiconductors, logic circuits are given. Logic circuits include dynamic logic circuits and static logic circuits and are formed using transistors and the like. Dynamic logic circuits can store data for a certain period of time. Thus, leakage current from transistors causes more severe problems in dynamic logic circuits than in static logic circuits. A logic circuit includes a first transistor whose off-state current is small and a second transistor whose gate is electrically connected to the first transistor. Electric charge is supplied to a node of the gate of the second transistor through the first transistor. Electric charge is supplied to the node through a first capacitor and a second capacitor. On/off of the second transistor is controlled depending on a state of the electric charge. The first transistor includes an oxide semiconductor in a channel formation region.
Public/Granted literature
- US20120293242A1 Semiconductor Device Public/Granted day:2012-11-22
Information query
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