Invention Grant
- Patent Title: High-frequency circuit
- Patent Title (中): 高频电路
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Application No.: US13009221Application Date: 2011-01-19
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Publication No.: US08542077B2Publication Date: 2013-09-24
- Inventor: Kazutoshi Masuda
- Applicant: Kazutoshi Masuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-128954 20100604
- Main IPC: H03H7/38
- IPC: H03H7/38

Abstract:
A high-frequency circuit according to one embodiment of the present invention includes a plurality of transistors, a plurality of input matching circuits, a plurality of output matching circuits, a plurality of resistors, and low-frequency oscillation suppressing circuits. The transistors are arranged on a substrate in parallel. The input matching circuits and output matching circuits are arranged on insulating substrates and connected to the transistors. The oscillation suppressing circuits are a circuit configured by a filter circuit having a desired transmission band and a resistor, and are connected to gate terminals of transistors located on both sides of the transistors, respectively. Each of resistors is formed to include a position closest to the transistor between the input matching circuits and between the output matching circuits. Furthermore, each of resistors has a length at which the oscillation suppressing circuit can suppress oscillation at the lowest frequency in the transmission band.
Public/Granted literature
- US20110298562A1 HIGH-FREQUENCY CIRCUIT Public/Granted day:2011-12-08
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