Invention Grant
- Patent Title: Memory structure having SRAM cells and SONOS devices
- Patent Title (中): 具有SRAM单元和SONOS器件的存储器结构
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Application No.: US12242285Application Date: 2008-09-30
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Publication No.: US08542514B1Publication Date: 2013-09-24
- Inventor: Sethuraman Lakshminarayanan , Myongseob Kim
- Applicant: Sethuraman Lakshminarayanan , Myongseob Kim
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A memory structure and method to fabricate the same is described. The memory structure includes a first memory cell having a first pair of non-volatile portions. The memory structure also includes a second memory cell having a second pair of non-volatile portions. The first and second pairs of non-volatile portions are disposed in an inter-locking arrangement.
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