Invention Grant
US08542521B2 Semiconductor storage device including memory cells capable of holding data
有权
包括能够保存数据的存储单元的半导体存储装置
- Patent Title: Semiconductor storage device including memory cells capable of holding data
- Patent Title (中): 包括能够保存数据的存储单元的半导体存储装置
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Application No.: US13230073Application Date: 2011-09-12
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Publication No.: US08542521B2Publication Date: 2013-09-24
- Inventor: Makoto Hamada
- Applicant: Makoto Hamada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a semiconductor storage device includes first cells, first bit and first word, and first sense. The first cells are capable of holding 2-level or higher-level data. The first bit and first word are capable of selecting the first cells. The first sense detects a first current. The first sense includes a first supply unit, a first accumulation unit, a detector, and a counter. The first supply unit supplies a second current when the data is read. The first accumulation unit accumulates an amount of charge. The detector detects the potential the amount of charge. The counter counts output from the detector. The counter includes a second supply unit, a second accumulation unit, and a sensing unit. The second supply unit charges a first node. The second accumulation unit accumulates a charge. The sensing unit detects the amount of charge of the second accumulation unit.
Public/Granted literature
- US20130064000A1 SEMICONDUCTOR STORAGE DEVICE INCLUDING MEMORY CELLS CAPABLE OF HOLDING DATA Public/Granted day:2013-03-14
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