Invention Grant
US08542543B2 Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory array
有权
可变电阻存储器件在信号路径之间具有相等的电阻，而与存储器阵列内的存储器单元的位置无关
- Patent Title: Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory array
- Patent Title (中): 可变电阻存储器件在信号路径之间具有相等的电阻，而与存储器阵列内的存储器单元的位置无关
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Application No.: US13844899Application Date: 2013-03-16
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Publication No.: US08542543B2Publication Date: 2013-09-24
- Inventor: Sang-Min Hwang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A memory device including variable resistance elements comprises a plurality of memory cells configured to store data; a first signal transmission/reception unit and a second signal transmission/reception unit configured to transmit a signal to the memory cells or receive a signal from the memory cells; a first transmission line arranged to couple first ends of the memory cells to the first signal transmission/reception unit; and a second transmission line configured to couple second ends of the memory cells to the second signal transmission/reception unit, wherein a first resistance of a first signal path coupled between the first and second signal transmission/reception units through a first memory cell of the memory cells is substantially equal to a second electrical resistance of a second signal path coupled between a second memory cell and the first and second signal transmission/reception units through a second memory cell of the memory cells.
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