Invention Grant
- Patent Title: Semiconductor memory device and thermal code output circuit capable of correctly measuring thermal codes
- Patent Title (中): 半导体存储器件和能够正确测量热代码的热代码输出电路
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Application No.: US12228819Application Date: 2008-08-15
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Publication No.: US08542548B2Publication Date: 2013-09-24
- Inventor: Sun Mo An
- Applicant: Sun Mo An
- Applicant Address: KR Icheon-Si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2008-0039585 20080428
- Main IPC: G11C7/04
- IPC: G11C7/04
Abstract:
A thermal code output circuit is provided, comprising a pulse signal generator configured to receive multiple period signals and generate a pulse signal in response to a test mode signal, a thermal code output unit configured to output multiple thermal codes in response to the pulse signal, and a strobing signal output unit configured to output the pulse signal or a reference voltage selectively as a strobing signal in response to the test mode signal.
Public/Granted literature
- US20090268777A1 Thermal code output circuit and semiconductor memory device Public/Granted day:2009-10-29
Information query
