Invention Grant
- Patent Title: Semiconductor integrated circuit and pattern layouting method for the same
- Patent Title (中): 半导体集成电路和图案布局方法相同
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Application No.: US13082858Application Date: 2011-04-08
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Publication No.: US08543956B2Publication Date: 2013-09-24
- Inventor: Kazuya Kamon
- Applicant: Kazuya Kamon
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-092474 20100413
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F7/38 ; H01L25/00

Abstract:
A semiconductor integrated circuit and a pattern lay-outing method for the same are disclosed, which can suppress bending or partial drop-out of a dummy pattern even when a mechanical stress acts on the dummy pattern in CMP. The semiconductor integrated circuit includes predetermined functional areas and a dummy pattern formed in a space area. The space area is positioned between predetermined functional areas. The dummy pattern includes a first metal portion formed in the shape of a frame and defining an outer edge of the dummy pattern, a second metal portion positioned on an inner periphery side of the first metal portion and formed so as to be continuous with the first metal portion, and a plurality of non-forming areas positioned in an area where the second metal portion is not formed on the inner periphery side of the first metal portion.
Public/Granted literature
- US20110248387A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND PATTERN LAYOUTING METHOD FOR THE SAME Public/Granted day:2011-10-13
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