Invention Grant
- Patent Title: Global leakage power optimization
- Patent Title (中): 全局漏电功率优化
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Application No.: US12695545Application Date: 2010-01-28
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Publication No.: US08543963B2Publication Date: 2013-09-24
- Inventor: Mahesh A. Iyer , Sudipto Kundu
- Applicant: Mahesh A. Iyer , Sudipto Kundu
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Park, Vaughan, Fleming & Dowler, LLP
- Agent Laxman Sahasrabuddhe
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Some embodiments provide techniques and systems for optimizing a circuit design's global leakage power. During operation, the system can determine leakage potentials for logic gates in the circuit design, such that a logic gate's leakage potential indicates an amount or degree by which the logic gate's leakage power is decreasable. The system can then determine a processing order for processing the logic gates based at least on the leakage potentials. Next, the system can optimize the circuit design's leakage power by attempting to decrease leakage power of logic gates according to the processing order.
Public/Granted literature
- US20110185333A1 GLOBAL LEAKAGE POWER OPTIMIZATION Public/Granted day:2011-07-28
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