Invention Grant
- Patent Title: Method of manufacturing a through-hole electrode substrate
- Patent Title (中): 制造通孔电极基板的方法
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Application No.: US12875644Application Date: 2010-09-03
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Publication No.: US08544169B2Publication Date: 2013-10-01
- Inventor: Takamasa Takano
- Applicant: Takamasa Takano
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2009-208374 20090909; JP2010-175286 20100804
- Main IPC: H01K3/10
- IPC: H01K3/10

Abstract:
A method of manufacturing a through-hole electrode substrate includes forming a plurality of through-holes in a substrate, forming a plurality of through-hole electrodes by filling a conductive material into the plurality of through-holes, forming a first insulation layer on one surface of the substrate, forming a plurality of first openings which expose the plurality of through-hole electrodes corresponding to each of the plurality of through-hole electrodes, on the first insulation layer and correcting a position of the plurality of first openings using the relationship between a misalignment amount of a measured distance value of an open position of a leaning through-hole among the plurality of through-holes and of a design distance value of the open position of the leaning through-hole among the plurality of through-holes with respect to a center position of the substrate.
Public/Granted literature
- US20110056740A1 THROUGH-HOLE ELECTRODE SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-03-10
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