Invention Grant
- Patent Title: Process for manufacturing semiconductor devices
- Patent Title (中): 制造半导体器件的工艺
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Application No.: US11835606Application Date: 2007-08-08
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Publication No.: US08545663B2Publication Date: 2013-10-01
- Inventor: Osamu Yamazaki , Isao Ichikawa , Naoya Saiki
- Applicant: Osamu Yamazaki , Isao Ichikawa , Naoya Saiki
- Applicant Address: JP Tokyo
- Assignee: Lintec Corporation
- Current Assignee: Lintec Corporation
- Current Assignee Address: JP Tokyo
- Agency: The Webb Law Firm
- Priority: JP2006-251131 20060915
- Main IPC: B29C65/00
- IPC: B29C65/00 ; C09J5/02 ; B32B37/00 ; C08J5/00 ; H01L21/00

Abstract:
In a process for manufacturing a semiconductor device comprising heating a wiring board on which a chip and an uncured adhesive layer are laminated for curing the adhesive layer, the improvement includes performing a statically pressurizing step before the adhesive layer is cured, in which step the wiring board on which the chip and the uncured adhesive layer are laminated is subjected to a static pressure greater than atmospheric pressure by not less than 0.05 MPa. According to the process, voids are easily eliminated irrespective of the design of the wiring board, and the adhesive is prevented from curling up on the chip.
Public/Granted literature
- US20080066856A1 Process for manufacturing process of semiconductor device Public/Granted day:2008-03-20
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