Invention Grant
- Patent Title: Critical dimension control during template formation
- Patent Title (中): 模板形成过程中的关键尺寸控制
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Application No.: US13441500Application Date: 2012-04-06
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Publication No.: US08545709B2Publication Date: 2013-10-01
- Inventor: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
- Applicant: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
- Applicant Address: US TX Austin
- Assignee: Molecular Imprints, Inc.
- Current Assignee: Molecular Imprints, Inc.
- Current Assignee Address: US TX Austin
- Agent Cameron A. King
- Main IPC: C03C15/00
- IPC: C03C15/00
Abstract:
Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
Public/Granted literature
- US20120187085A1 CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION Public/Granted day:2012-07-26
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