Invention Grant
- Patent Title: Apparatus and method to inspect defect of semiconductor device
- Patent Title (中): 检测半导体器件缺陷的装置和方法
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Application No.: US13226757Application Date: 2011-09-07
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Publication No.: US08546154B2Publication Date: 2013-10-01
- Inventor: Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
- Applicant: Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR2008-119887 20081128
- Main IPC: G01R31/36
- IPC: G01R31/36 ; H01L21/66

Abstract:
An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
Public/Granted literature
- US20120080597A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE Public/Granted day:2012-04-05
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