Invention Grant
- Patent Title: Method of fabricating a self-aligned top-gate organic transistor
- Patent Title (中): 制造自对准顶栅有机晶体管的方法
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Application No.: US12645101Application Date: 2009-12-22
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Publication No.: US08546179B2Publication Date: 2013-10-01
- Inventor: Euan Smith
- Applicant: Euan Smith
- Applicant Address: GB Cambridgeshire
- Assignee: Cambridge Display Technology Ltd.
- Current Assignee: Cambridge Display Technology Ltd.
- Current Assignee Address: GB Cambridgeshire
- Agency: Marshall, Gerstein & Borun LLP
- Priority: GB0823424.7 20081223
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode.
Public/Granted literature
- US20100227434A1 Method of Fabricating a Self-aligned Top-gate Organic Transistor Public/Granted day:2010-09-09
Information query
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