Invention Grant
- Patent Title: Method for growing conformal epi layers and structure thereof
- Patent Title (中): 生长保形外延层及其结构的方法
-
Application No.: US13251315Application Date: 2011-10-03
-
Publication No.: US08546204B2Publication Date: 2013-10-01
- Inventor: Abhishek Dube , Jophy Stephen Koshy
- Applicant: Abhishek Dube , Jophy Stephen Koshy
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Howard M. Cohn; Katherine S. Brown
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/8238 ; H01L21/336
Abstract:
A method for forming a conformal buffer layer of uniform thickness and a resulting semiconductor structure are disclosed. The conformal buffer layer is used to protect highly-doped extension regions during formation of an epitaxial layer that is used for inducing mechanical stress on the channel region of transistors.
Public/Granted literature
- US20130082275A1 METHOD FOR GROWING CONFORMAL EPI LAYERS AND STRUCTURE THEREOF Public/Granted day:2013-04-04
Information query
IPC分类:
