Invention Grant
- Patent Title: Detecting a deposition condition
- Patent Title (中): 检测沉积条件
-
Application No.: US13186356Application Date: 2011-07-19
-
Publication No.: US08546205B2Publication Date: 2013-10-01
- Inventor: Lam T. Luu , Heather L. Knoedler , Richard S. Bingle , Daniel C. Weaver
- Applicant: Lam T. Luu , Heather L. Knoedler , Richard S. Bingle , Daniel C. Weaver
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C8/00 ; H05H1/24 ; H01L21/84 ; H01L21/8249

Abstract:
Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with a metal source prior to metal deposition onto a semiconductor wafer. This apparatus can also include a shutter configured to remain in a closed position when the crystal monitor sensor detects an undesired condition, so as to prevent metal deposition onto the semiconductor wafer. In some implementations, the undesired condition can be indicative of a composition of a metal source, a deposition rate of a metal source, impurities of a metal source, position of a metal source, position of an electron beam, and/or intensity of an electron beam.
Public/Granted literature
- US20120083050A1 DETECTING A DEPOSITION CONDITION Public/Granted day:2012-04-05
Information query
IPC分类: