Invention Grant
- Patent Title: Replacement gate having work function at valence band edge
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Application No.: US12948031Application Date: 2010-11-17
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Publication No.: US08546211B2Publication Date: 2013-10-01
- Inventor: Keith Kwong Hon Wong , Michael P. Chudzik , Unoh Kwon
- Applicant: Keith Kwong Hon Wong , Michael P. Chudzik , Unoh Kwon
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
Replacement gate stacks are provided, which increase the work function of the gate electrode of a p-type field effect transistor (PFET). In one embodiment, the work function metal stack includes a titanium-oxide-nitride layer located between a lower titanium nitride layer and an upper titanium nitride layer. The stack of the lower titanium nitride layer, the titanium-oxide-nitride layer, and the upper titanium nitride layer produces the unexpected result of increasing the work function of the work function metal stack significantly. In another embodiment, the work function metal stack includes an aluminum layer deposited at a temperature not greater than 420° C. The aluminum layer deposited at a temperature not greater than 420° C. produces the unexpected result of increasing the work function of the work function metal stack significantly.
Public/Granted literature
- US20120119204A1 Replacement Gate Having Work Function at Valence Band Edge Public/Granted day:2012-05-17
Information query
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