Invention Grant
US08546214B2 P-type control gate in non-volatile storage and methods for forming same
有权
非易失性存储中的P型控制门及其形成方法
- Patent Title: P-type control gate in non-volatile storage and methods for forming same
- Patent Title (中): 非易失性存储中的P型控制门及其形成方法
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Application No.: US12887328Application Date: 2010-09-21
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Publication No.: US08546214B2Publication Date: 2013-10-01
- Inventor: Takashi Whitney Orimoto , Atsushi Suyama , Ming Tian , Henry Chin , Henry Chien , Vinod Robert Purayath , Dana Lee
- Applicant: Takashi Whitney Orimoto , Atsushi Suyama , Ming Tian , Henry Chin , Henry Chien , Vinod Robert Purayath , Dana Lee
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L21/8242
- IPC: H01L21/8242
Abstract:
Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.
Public/Granted literature
- US20110260235A1 P-TYPE CONTROL GATE IN NON-VOLATILE STORAGE AND METHODS FOR FORMING SAME Public/Granted day:2011-10-27
Information query
IPC分类:
