Invention Grant
- Patent Title: Method of improving oxide growth rate of selective oxidation processes
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Application No.: US13117931Application Date: 2011-05-27
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Publication No.: US08546271B2Publication Date: 2013-10-01
- Inventor: Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
- Applicant: Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
Public/Granted literature
- US20110230060A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES Public/Granted day:2011-09-22
Information query
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