Invention Grant
- Patent Title: Memory device and semiconductor device
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Application No.: US11793810Application Date: 2006-01-20
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Publication No.: US08546790B2Publication Date: 2013-10-01
- Inventor: Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
- Applicant: Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
- Applicant Address: JP Atsugi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-014617 20050121
- International Application: PCT/JP2006/001263 WO 20060120
- International Announcement: WO2006/078065 WO 20060727
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
Public/Granted literature
- US08835907B2 Memory device and semiconductor device Public/Granted day:2014-09-16
Information query
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