Invention Grant
- Patent Title: Composite dielectric material doped with rare earth metal oxide and manufacturing method thereof
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Application No.: US13075162Application Date: 2011-03-29
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Publication No.: US08546798B2Publication Date: 2013-10-01
- Inventor: Hung-duen Yang , Sudip Mukherjee , Ching-hsuan Chen
- Applicant: Hung-duen Yang , Sudip Mukherjee , Ching-hsuan Chen
- Applicant Address: TW Kaohsiung
- Assignee: National Sun Yat-Sen University
- Current Assignee: National Sun Yat-Sen University
- Current Assignee Address: TW Kaohsiung
- Agent Cheng-Ju Chiang
- Priority: TW99109435A 20100329
- Main IPC: H01L29/12
- IPC: H01L29/12

Abstract:
A composite dielectric material doped with rare earth metal oxide and a manufacturing method thereof are provided. The composite dielectric material is doped with nano-crystalline rare metal oxide which is embedded in silicon dioxide glass matrix, and the composite dielectric material of the nano-crystalline rare metal oxide and the silicon dioxide glass matrix is synthesized by the manufacturing method using sol-gel route. The dielectric value of the glass composite dielectric material is greater than that of pure rare metal oxide or that of silicon dioxide. In presence of magnetic field, the dielectric value of the composite dielectric material is substantially enhanced compared with that of the composite dielectric material at zero field.
Public/Granted literature
- US20110253996A1 COMPOSITE DIELECTRIC MATERIAL DOPED WITH RARE EARTH METAL OXIDE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-10-20
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