Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US12960281Application Date: 2010-12-03
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Publication No.: US08546827B2Publication Date: 2013-10-01
- Inventor: Takahiko Nozaki , Hiroshi Kotani
- Applicant: Takahiko Nozaki , Hiroshi Kotani
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenealy Vaidya LLP
- Priority: JP2009-275555 20091203
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin. As the anisotropic heat conduction material, for example, one or more laminated layers of graphite in the form of sheet are used.
Public/Granted literature
- US20110133236A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-06-09
Information query
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