Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13360125Application Date: 2012-01-27
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Publication No.: US08546840B2Publication Date: 2013-10-01
- Inventor: Yoshiki Inoue , Keiji Emura
- Applicant: Yoshiki Inoue , Keiji Emura
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2011-23491 20110207
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.
Public/Granted literature
- US20120199868A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2012-08-09
Information query
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