Invention Grant
- Patent Title: Materials, systems and methods for optoelectronic devices
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Application No.: US13209264Application Date: 2011-08-12
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Publication No.: US08546853B2Publication Date: 2013-10-01
- Inventor: Hui Tian , Edward Sargent
- Applicant: Hui Tian , Edward Sargent
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
Public/Granted literature
- US20120037789A1 MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES Public/Granted day:2012-02-16
Information query
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