Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12771801Application Date: 2010-04-30
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Publication No.: US08546854B2Publication Date: 2013-10-01
- Inventor: Jong Su Kim
- Applicant: Jong Su Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336

Abstract:
A semiconductor device includes an isolation layer formed on a semiconductor substrate; an active region defined by the isolation layer; at least one gate line formed to overlap with the active region; at least one first active tab formed on a first interface of the active region which overlaps with the gate line; and a first gate tab formed on a second interface facing away from the first interface in such a way as to project from the gate line.
Public/Granted literature
- US20110266597A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-11-03
Information query
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