Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices

Invention Grant

US08546870B2 Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices 有权

Title translation: 具有具有不同宽度的导电图案的栅极结构的半导体器件和制造这种器件的方法

Please log in to see more content

Patent Title: Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices
Patent Title (中): 具有具有不同宽度的导电图案的栅极结构的半导体器件和制造这种器件的方法
Application No.: US12622594

Application Date: 2009-11-20
Publication No.: US08546870B2

Publication Date: 2013-10-01
Inventor: Ju-Hyung Kim , Chang-Seok Kang , Sung-Il Chang , Young-Woo Park , Jung-Dal Choi
Applicant: Ju-Hyung Kim , Chang-Seok Kang , Sung-Il Chang , Young-Woo Park , Jung-Dal Choi
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, P.A.
Priority: KR10-2008-0119886 20081128
Main IPC: H01L29/792
IPC: H01L29/792

Semiconductor devices having gate structures with conductive patterns of different widths and methods of fabricating such devices

Abstract:

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first dielectric pattern, a data storage pattern and a second dielectric pattern, which are sequentially stacked on a semiconductor substrate. A first conductive pattern is provided on the second dielectric pattern. A second conductive pattern having a greater width than the first conductive pattern is provided on the first conductive pattern.

Abstract(Chinese):

提供半导体器件及其制造方法。半导体器件包括依次层叠在半导体衬底上的第一电介质图案，数据存储图案和第二电介质图案。在第二电介质图案上提供第一导电图案。具有比第一导电图案更大的宽度的第二导电图案设置在第一导电图案上。

Public/Granted literature

US20100133604A1 Semiconductor Devices Having Gate Structures with Conductive Patterns of Different Widths and Methods of Fabricating Such Devices Public/Granted day:2010-06-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/792	......带有电荷捕获栅绝缘体，例如MNOS存储晶体管