Invention Grant
- Patent Title: Vertical transistor having edge termination structure
- Patent Title (中): 具有边缘端接结构的垂直晶体管
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Application No.: US13420076Application Date: 2012-03-14
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Publication No.: US08546875B1Publication Date: 2013-10-01
- Inventor: Franz Hirler , Andreas Meiser
- Applicant: Franz Hirler , Andreas Meiser
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
Described herein are embodiments of a vertical power transistor having drain and gate terminals located on the same side of a semiconductor body and capable of withstanding high voltages in the off-state, in particular voltages of more than 100V.
Public/Granted literature
- US20130240955A1 VERTICAL TRANSISTOR HAVING EDGE TERMINATION STRUCTURE Public/Granted day:2013-09-19
Information query
IPC分类:
