Invention Grant
US08546876B2 Systems and devices including multi-transistor cells and methods of using, making, and operating the same
有权
包括多晶体管单元的系统和器件以及使用，制造和操作它们的方法
- Patent Title: Systems and devices including multi-transistor cells and methods of using, making, and operating the same
- Patent Title (中): 包括多晶体管单元的系统和器件以及使用，制造和操作它们的方法
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Application No.: US12052317Application Date: 2008-03-20
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Publication No.: US08546876B2Publication Date: 2013-10-01
- Inventor: Werner Juengling
- Applicant: Werner Juengling
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A device may include a first transistor, a second transistor, and a data element. The first transistor may have a column gate and a channel, and the second transistor may include a row gate that crosses over the column gate, under the column gate, or both. The second transistor may also include another channel, a source disposed near a distal end of a first leg, and a drain disposed near a distal end of a second leg. The column gate may extend between the first leg and the second leg. The channel of the second transistor may be connected to the channel of the first transistor, and the data element may be connected to the source or the drain. Methods, systems, and other devices are contemplated.
Public/Granted literature
Information query
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