Invention Grant
- Patent Title: Photoelectric conversion device and manufacturing method thereof
- Patent Title (中): 光电转换装置及其制造方法
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Application No.: US12779471Application Date: 2010-05-13
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Publication No.: US08546902B2Publication Date: 2013-10-01
- Inventor: Seiichi Tamura , Hiroshi Yuzurihara , Takeshi Ichikawa , Ryuichi Mishima
- Applicant: Seiichi Tamura , Hiroshi Yuzurihara , Takeshi Ichikawa , Ryuichi Mishima
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-137411 20040506
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
Public/Granted literature
- US20100219497A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-02
Information query
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