Invention Grant
- Patent Title: Integrated circuits having place-efficient capacitors and methods for fabricating the same
- Patent Title (中): 具有放置效率的电容器的集成电路及其制造方法
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Application No.: US13542561Application Date: 2012-07-05
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Publication No.: US08546915B2Publication Date: 2013-10-01
- Inventor: Dmytro Chumakov
- Applicant: Dmytro Chumakov
- Applicant Address: KY Grand Cayman
- Assignee: GLOBLFOUNDRIES, Inc.
- Current Assignee: GLOBLFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
An integrated circuit having a place-efficient capacitor includes a lower capacitor electrode having a surface area comprised of an inner surface area of a partial opening and a via opening formed in a patterned dielectric layer on a semiconductor substrate, a capacitor insulating layer overlying the lower capacitor electrode, and an upper capacitor electrode including a metal fill material filling the partial opening and the via opening and having a surface area that includes the inner surface area of the partial opening and via opening.
Public/Granted literature
- US20120267763A1 INTEGRATED CIRCUITS HAVING PLACE-EFFICIENT CAPACITORS AND METHODS FOR FABRICATING THE SAME Public/Granted day:2012-10-25
Information query
IPC分类:
