Invention Grant
- Patent Title: Multi-direction design for bump pad structures
- Patent Title (中): 凸块结构的多方向设计
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Application No.: US12700004Application Date: 2010-02-04
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Publication No.: US08546941B2Publication Date: 2013-10-01
- Inventor: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Tzuan-Horng Liu
- Applicant: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Tzuan-Horng Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction.
Public/Granted literature
- US20110186988A1 Multi-Direction Design for Bump Pad Structures Public/Granted day:2011-08-04
Information query
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