Invention Grant
US08546945B2 Pillar structure having a non-planar surface for semiconductor devices
有权
具有用于半导体器件的非平坦表面的柱结构
- Patent Title: Pillar structure having a non-planar surface for semiconductor devices
- Patent Title (中): 具有用于半导体器件的非平坦表面的柱结构
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Application No.: US13663203Application Date: 2012-10-29
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Publication No.: US08546945B2Publication Date: 2013-10-01
- Inventor: Tin-Hao Kuo , Chen-Shien Chen , Ching-Wen Hsiao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A conductive pillar for a semiconductor device is provided. The conductive pillar is formed such that a top surface is non-planar. In embodiments, the top surface may be concave, convex, or wave shaped. An optional capping layer may be formed over the conductive pillar to allow for a stronger inter-metallic compound (IMC) layer. The IMC layer is a layer formed between solder material and an underlying layer, such as the conductive pillar or the optional capping layer.
Public/Granted literature
- US20130056869A1 PILLAR STRUCTURE HAVING A NON-PLANAR SURFACE FOR SEMICONDUCTOR DEVICES Public/Granted day:2013-03-07
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