Invention Grant
- Patent Title: Manufacturing method of semiconductor device, semiconductor device and mobile communication device
- Patent Title (中): 半导体器件，半导体器件和移动通信器件的制造方法
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Application No.: US13353798Application Date: 2012-01-19
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Publication No.: US08546960B2Publication Date: 2013-10-01
- Inventor: Takashi Yamazaki
- Applicant: Takashi Yamazaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-009549 20110120
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/02 ; H01L23/28 ; H01L21/00
Abstract:
A manufacturing method of a semiconductor device includes: sealing a semiconductor chip with a sealing resin containing a filler; exposing a part of the filler; etching at least a part of the exposed filler; and forming a metal film at least at a part of a surface of the sealing resin including inner surfaces of holes formed at the surface of the sealing resin by the etching.
Public/Granted literature
- US20120187585A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MOBILE COMMUNICATION DEVICE Public/Granted day:2012-07-26
Information query
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