A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2). The plasma processing device distributes the power of the power supply device (1) into several portions corresponding to the number of the sub-electrodes (31, 32) through the power distribution device (9), and each portion of the power is individually inputted to the corresponding sub-electrode (31, 32) to acquire individual electric field distribution between each sub-electrode plate (31, 32) and the second electrode plate (4).