Invention Grant
- Patent Title: Temperature sensor device
- Patent Title (中): 温度传感器装置
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Application No.: US13345064Application Date: 2012-01-06
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Publication No.: US08547163B2Publication Date: 2013-10-01
- Inventor: Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
- Applicant: Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2011-006101 20110114
- Main IPC: H01L35/00
- IPC: H01L35/00
Abstract:
Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.
Public/Granted literature
- US20120182062A1 TEMPERATURE SENSOR DEVICE Public/Granted day:2012-07-19
Information query
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