Invention Grant
US08547661B2 MAMR head with self-aligned write element and microwave field generator
有权
具有自对准写元件和微波场发生器的MAMR头
- Patent Title: MAMR head with self-aligned write element and microwave field generator
- Patent Title (中): 具有自对准写元件和微波场发生器的MAMR头
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Application No.: US12589274Application Date: 2009-10-21
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Publication No.: US08547661B2Publication Date: 2013-10-01
- Inventor: Zhigang Bai
- Applicant: Zhigang Bai
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/23 ; G11B5/187
Abstract:
The invention discloses a MAMR head that has the STO stack placed at the trailing side of the write element, with both STO and write element completely self-aligned in the cross track direction. A method for defining both the MP and the STO stack geometries in a single step is also described.
Public/Granted literature
- US20110090603A1 MAMR head with self-aligned write element and microwave field generator Public/Granted day:2011-04-21
Information query
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