Invention Grant
- Patent Title: Semiconductor device having power supply-side and ground-side metal reinforcing members insulated from each other
- Patent Title (中): 具有彼此绝缘的电源侧和接地侧金属加强构件的半导体装置
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Application No.: US13388285Application Date: 2010-08-20
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Publication No.: US08547705B2Publication Date: 2013-10-01
- Inventor: Kenichi Inaba , Minoru Yoshikawa
- Applicant: Kenichi Inaba , Minoru Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JPP2009-190962 20090820
- International Application: PCT/JP2010/064075 WO 20100820
- International Announcement: WO2011/021690 WO 20110224
- Main IPC: H05K7/00
- IPC: H05K7/00
Abstract:
Provided is a semiconductor device which includes a wiring substrate; a semiconductor chip fixedly attached to a first surface of the wiring substrate; a power supply pad that is provided on a second surface opposite to the first surface of the wiring substrate, and supplies electric power to the wiring substrate; a ground pad that is provided on the second surface of the wiring substrate and grounds the wiring substrate; a power supply-side reinforcing member that is connected to the power supply pad and made of metal; a ground-side reinforcing member that is connected to the ground pad and made of metal; and an insulating part that insulates the power supply-side reinforcing member and the ground-side reinforcing member from each other.
Public/Granted literature
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